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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 5.0A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 5.0A pulsed VGS = 10V, ID = 8.0A pulsed Tj = +125C VGS = 10V, ID = 5.0A pulsed Diode Forward Voltage VGS = 0V, ID = 8.0A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 100 2.0 1.0 4.0 5.0 100 200 25 0.25 0.18 0.195 0.35 1.5 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 100 20 8.0 5.0 25 (1) (2) Unit Vdc Vdc Adc Adc W C 0.18 -55 to +150 TO-205AF (formerly TO-39) Vdc nAdc Adc mAdc Vdc U - 18 LCC T4-LDS-0047 Rev. 1 (072807) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 8.0A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 30Vdc di/dt 100A/s, VDD 50V, IF = 8.0A Symbol td(on) tr td(off) tf trr Min. Max. 30 75 40 45 300 Unit Symbol Qg(on) Qgs Qgd Min. Max. 28.51 6.34 16.59 Unit nC VGS = 10V, ID = 8.0A VDS = 50V ns ns T4-LDS-0047 Rev. 1 (072807) Page 2 of 2 |
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